FOGALE nanotech Non contact measurement with precision sensors-Wafer thickness

Optical sensors and systems

LISE System

Wafer thickness metrology

T-MAP produces accurate thickness maps of wafers with thicknesses ranging from 20 µm to 1 mm.
It achieves an absolute accuracy of ± 0.5 µm on thickness measurements with an excellent repeatability of 100 nm.

The cost-effective, manual T-MAP system performs its measurements point by point. It consists of a rack-mounted electronic unit, a fiber-pigtailed collimator, and a stable mechanical platform holding the chuck wafer support that can be displaced on an x-y stage. A red laser pointer marks the measurement point. Connect the manual
T-MAP system to your computer via a PCI, PXI or PCMCIA card (shipped with T-MAP).

Relable results on:

Ultrathin wafer (20 µm)

Bumped / taped / warped wafer

Wafer on dicing frames

All kind of substrates: Si, GaAs, InP, Quartz, SiC, Sapphire

Submicron accuracy
High throughput
Thickness range: 20 µm … 1 mm

The automatic T-MAP system allows to acquire thickness maps with an arbitrary number of pixels with one mouse click.
It includes high-resolution motorized translation stages, the computer system and (optionally) a wafer loading robot for fully-automatic processing of wafers at a high throughput rate.